Product Summary

The BUX42 0082 is an NPN silicon power transistor. It is designed for high speed, high voltage, high power applications.

Parametrics

BUX42 0082 absolute maximum ratings: (1)Collector-Emitter voltage: 250V; (2)Collector-Base Voltage: 300V; (3)Emitter-Base Voltage: 7V; (4)Collector-Emitter Voltage (VBE=-2.5V): 300V; (5)Collector-Emitter Voltage (RBE=100Ω): 290V; (6)Collector-Current continuous: 12A; (7)Base-Current continuous: 2.4A; (8)Total power dissipation: 120W; (9)Operating and storage junction temperature range: -65 to 200℃.

Features

BUX42 0082 features: (1)Low VCE(sat) max.=1.2V at IC=4A; (2)Very fast switching times: TF max. =0.4μs at IC=6A.

Diagrams

BUX42 0082 dimension