(China (Mainland))
Product Summary
The BUZ45 is an N-Channel enhancement mode silicon gate power field effect transistor. The BUZ45 is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The BUZ45 can be operated directly from integrated circuits.
Features
BUZ45 features: (1)9.6A, 500V; (2)rDS(ON) = 0.600Ω; (3)SOA is Power Dissipation Limited; (4)Nanosecond Switching Speeds; (5)Linear Transfer Characteristics; (6)High Input Impedance; (7)Majority Carrier Device.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 BUZ45 |
Other |
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Data Sheet |
Negotiable |
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BUZ45A |
Other |
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Data Sheet |
Negotiable |
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BUZ45B |
Other |
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Data Sheet |
Negotiable |
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