(China (Mainland))
Product Summary
The ECH8601M-TL-H is an N-Channel Silicon MOSFET.
Parametrics
ECH8601M-TL-H absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 24V; (2)Gate-to-Source Voltage VGSS: ±12V; (3)Drain Current (DC) ID: 8A; (4)Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1%: 60A; (5)Allowable Power Dissipation PD When mounted on ceramic substrate (1000mm2×0.8mm) 1unit: 1.5W; (6)Total Dissipation PT When mounted on ceramic substrate (1000mm2×0.8mm): 1.6W; (7)Channel Temperature Tch: 150℃; (8)Storage Temperature Tstg: --55 to +150℃.
Features
ECH8601M-TL-H features: (1)Low ON-resistance; (2)Built-in gate protection resistor; (3)2.5V drive; (4)Best suited for LiB charging and discharging switch; (5)Common-drain type; (6)Halogen free compliance; (7)Protection diode in.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 ECH8601M-TL-H |
ON Semiconductor |
MOSFET NCH+NCH 2.5V DRIVE SERIES |
Data Sheet |
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