(China (Mainland))
Product Summary
The MT16LSDF6464HY-133D2 is a high-speed CMOS, dynamic random-access 256MB and 512MB unbuffered memory module. It is organized in x64 configurations. The MT16LSDF6464HY-133 uses internally configured quad-bank SDRAMs with a synchronous interface (all signals are registered on the positive edge of the clock signal CK). The MT16LSDF6464HY-133D2 provides for programmable READ or WRITE burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.
Parametrics
MT16LSDF6464HY-133D2 absolute maximum ratings: (1)Voltage on VDD Supply, Relative to VSS: -1V to +4.6V; (2)Voltage on Inputs, NC or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TOPR (Commercial - ambient): 0℃ to +65℃; (4)Storage Temperature (plastic): -55℃ to +125℃; (5)Short Circuit Output Current: 50mA.
Features
MT16LSDF6464HY-133D2 features: (1)PC100- and PC133-compliant, 144-pin, smalloutline, dual in-line memory module (SODIMM); (2)Utilizes 100 MHz and 133 MHz SDRAM components; (3)Unbuffered; (4)256MB (32 Meg × 64) and 512MB (64 Meg × 64); (5)Single +3.3V power supply; (6)Fully synchronous; all signals registered on positive edge of system clock; (7)Internal pipelined operation; column address can be changed every clock cycle; (8)Internal SDRAM banks for hiding row access/precharge; (9)Programmable burst lengths: 1, 2, 4, 8, or full page; (10)Auto precharge and auto refresh modes; (11)Self refresh mode: standard and low-power; (12)LVTTL-compatible inputs and outputs; (13)Serial presence-detect (SPD); (14)Gold edge connectors.
Diagrams
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 MT16LSDF6464HY-133D2 |
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MODULE SDRAM 512MB 144-SODIMM |
Data Sheet |
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