Product Summary

The 28F640W18TD is an Intel Wireless Flash Memory with flexible multi-partition dual operation, the 28F640W18TDprovides high-performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash memory intrinsic non-volatility, theW18 device eliminates the traditional system-performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster execution memory. The 28F640W18TD reduces the total memory requirement that increases reliability and reduces overall system power consumption and cost.

Parametrics

28F640W18TD absolute maximum ratings: (1)Temperature under Bias: –40℃ to +85℃; (2)Storage Temperature: –65℃ to +125℃; (3)Voltage on Any Pin (except VCC, VCCQ, VPP): –0.5 V to +2.45 V; (4)VPP Voltage 1,2,3: –0.2 V to +14 V; (5)VCC and VCCQ Voltage: –0.2 V to +2.45 V; (6)Output Short Circuit Current: 100mA.

Features

28F640W18TD features: (1)High Performance Read-While-Write/Erase; (2)Security; (3)128-bit Protection Register; (4)64-bits Unique Programmed by Intel; (5)64-bits User-Programmable; (6)Quality and Reliability; (7)Temperature Range: –40℃ to +85; (8)100k Erase Cycles per Block; (9)Multiple 4-Mbit Partitions; (10)Dual Operation: RWW or RWE; (11)8KB parameter blocks; (12)64KB main blocks; (13)Top or Bottom Parameter Devices; (14)16-bit wide data bus.

Diagrams

28F640W18TD block diagram