(China (Mainland))
Product Summary
The K4S511632D-UC75 is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 16bits, fabricated with Samsung’s high performance CMOS technology. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Features:(1)JEDEC standard 3.3V power supply;(2)LVTTL compatible with multiplexed address;(3)Four banks operation;(4)MRS cycle with address key programs:CAS latency (2 & 3),Burst length (1, 2, 4, 8 & Full page),Burst type (Sequential & Interleave);(5)All inputs are sampled at the positive going edge of the system clock;(6)Burst read single-bit write operation;(7)DQM for masking;(8)Auto & self refresh;(9)64ms refresh period (8K Cycle).
Features
Absolute maximum ratings:(1)Voltage on any pin relative to Vss:-1.0V to 4.6V;(2)Voltage on VDD supply relative to Vss:-1.0V to 4.6V;(3)Storage temperature:-55°C to +150°C;(4)Power dissipation:2W;(5)Short circuit current:50mA.
Diagrams
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 K4S511632D-UC75 |
Other |
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Data Sheet |
Negotiable |
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K4S510432B |
Other |
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Negotiable |
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K4S510832B |
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Data Sheet |
Negotiable |
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K4S510832M |
Other |
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Data Sheet |
Negotiable |
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K4S511533F - Y(P)C |
Other |
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Data Sheet |
Negotiable |
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K4S511533F - Y(P)F |
Other |
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Data Sheet |
Negotiable |
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K4S511533F - Y(P)L |
Other |
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Data Sheet |
Negotiable |
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