Product Summary

The EDE1108ACBG-8E-E is a 1G bits DDR2 SDRAM.

Parametrics

EDE1108ACBG-8E-E absolute maximum ratings: (1)Power supply voltage VDD -1.0 to +2.3 V; (2)Power supply voltage for output VDDQ -0.5 to +2.3 V; (3)Input voltage VIN -0.5 to +2.3 V; (4)Output voltage VOUT -0.5 to +2.3 V; (5)Storage temperature Tstg -55 to +100℃; (6)Power dissipation PD 1.0 W; (7)Short circuit output current IOUT 50 mA.

Features

EDE1108ACBG-8E-E features: (1)The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture; (2)Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver; (3)DQS is edge-aligned with data for READs; center-aligned with data for WRITEs; (4)Differential clock inputs (CK and /CK); (5)DLL aligns DQ and DQS transitions with CK transitions; (6)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (7)Data mask (DM) for write data; (8)Posted /CAS by programmable additive latency for better command and data bus efficiency; (9)Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality; (10)Programmable RDQS, /RDQS output for making × 8 organization compatible to × 4 organization; (11)/DQS, (/RDQS) can be disabled for single-ended Data Strobe operation.

Diagrams

EDE1108ACBG-8E-E block diagrma

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
EDE1108ACBG-8E-E
EDE1108ACBG-8E-E
Other

Data Sheet
Negotiable 
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(USD)		 Quantity
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EDE1108ACBG-8E-E
EDE1108ACBG-8E-E
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Negotiable