(China (Mainland))
Product Summary
The K4S641632N-LC60 is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Absolute maximum ratings:(1)Voltage on any pin relative to Vss:-1.0V to 4.6V;(2)Voltage on VDD supply relative to Vss:-1.0V to 4.6V;(3)Storage temperature:-55°C to +150°C;(4)Power dissipation:1W;(5)Short circuit current:50mA.
Features
Features:(1)JEDEC standard 3.3V power supply;(2)LVTTL compatible with multiplexed address;(3)Four banks operation;(4)All inputs are sampled at the positive going edge of the system clock;(5)Burst read single-bit write operation;(6)DQM (x8) & L(U)DQM (x16) for masking;(7)Auto & self refresh;(8)64ms refresh period (4K cycle);(9)Pb-free and Halogen-free Package;(10)RoHS compliant;(11)Support Industrial Temp (-40 to 85°C).
Diagrams
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 K4S640432D |
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K4S640432F |
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K4S640432H-TC(L)75 |
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K4S640432H-UC |
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K4S640832C |
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K4S640832D |
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