Product Summary

The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. The SD1407 is characterized by 30mHZ, 28V, IMD -30dB, common emitter, gold metallization and so on.

Parametrics

SD1407 absolute maximum ratings (Tcase = 25℃): (1)VCBO, Collector-Base Voltage: 65 V; (2)VCEO, Collector-Emitter Voltage: 36 V; (3)VEBO, Emitter-Base Voltage: 4.0 V; (4)IC, Device Current: 20 A; (5)PDISS, Power Dissipation: 270 W; (6)TJ, Junction Temperature: +200 ℃; (7)TSTG, Storage Temperature: - 65 to +150 ℃.

Features

SD1407 features: (1)30 mhz; (2)28 volts; (3)imd -30 db; (4)common emitter; (5)gold metallization pout = 125 w min; (6)with 15 db gain.

Diagrams

SD1407 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SD1407
SD1407

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
SD1407-16
SD1407-16

STMicroelectronics

Transistors Bipolar (BJT) NPN 28.0V 30MHz

Data Sheet

Negotiable