TE28F200B5B80

smart 5 boot block flash memory, 5V, 44-Lead TSOP, 100 mA

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PartNumber:: TE28F200B5B80

Brand:: Intel Corporation - Intel | Pack: TSOP | D/C: 03+

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Products Upload time: 2012-05-30

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Part Number:TE28F200B5B80
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Product Summary

The TE28F200B5B80 is a smart 5 boot block flash memory. It provides pinout-compatible flash memories at the 2-, 4-, and 8-Mbit densities. The TE28F200B5B80 can be configured to operate either in 16-bit or 8-bit bus mode, with the data divided into individually erasable blocks.

Parametrics

TE28F200B5B80 absolute maxing ratings: (1)Commercial Operating Temperature: During Read/Erase/Program: 0 ℃ to +70 ℃, Temperature Under Bias: –10 ℃ to +80 ℃; (2)Extended Operating Temperature: During Read/Erase/Program: –40 ℃ to +85 ℃, Temperature Under Bias: –40 ℃ to +85 ℃; (3)Storage Temperature: –65 ℃ to +125 ℃; (4)Voltage on Any Pin(except VCC, VPP, A9 and RP#) with Respect to GND: –2.0 V to +7.0 V; (5)Voltage on Pin RP# or Pin A9 with Respect to GND: –2.0 V to +13.5 V; (6)VPP Program Voltage with Respect to GND during Block Erase and Word/Byte Program: –2.0 V to +14.0 V; (7)VCC Supply Voltage with Respect to GND: –2.0 V to +7.0 V; (8)Output Short Circuit Current: 100 mA.

Features

TE28F200B5B80 features: (1)SmartVoltage Technology: Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes, Increased Programming Throughput at 12 V VPP; (2)Very High-Performance Read: 2-, 4-Mbit: 60 ns Access Time, 8-Mbit: 70 ns Access Time; (3)x8 or x8/x16-Configurable Data Bus; (4)Low Power Consumption: Max 60 mA Read Current at 5 V, Auto Power Savings: <1 mA Typical Standby Current; (5)Optimized Array Blocking Architecture: 16-KB Protected Boot Block, Two 8-KB Parameter Blocks, 96-KB and 128-KB Main Blocks, Top or Bottom Boot Locations; (6)Extended Temperature Operation: -40 ℃ to +85 ℃; (7)Industry-Standard Packaging: 40, 48-Lead TSOP, 44-Lead PSOP.