(China (Mainland))
Product Summary
The BFN26E6327 is an NPN Silicon High-Voltage Transistor.
Parametrics
BFN26E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 300 V; (2)Collector-base voltage VCBO: 300 V; (3)Emitter-base voltage VEBO: 5 V; (4)DC collector current IC: 200 mA; (5)Peak collector current ICM: 500 mA; (6)Base current IB: 100 mA; (7)Peak base current IBM: 200 mA; (8)Total power dissipation, TS = 74 ℃ Ptot: 360 mW; (9)Junction temperature Tj: 150 ℃; (10)Storage temperature Tstg: -65 to 150 ℃.
Features
BFN26E6327 features: (1)Suitable for video output stages in TV sets and switching power supplies; (2)High breakdown voltage; (3)Low collector-emitter saturation voltage; (4)Complementary types: BFN25, BFN27 (PNP).
Diagrams
 |
 BFN23 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BFN24 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BFN25 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BFN26 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BFN27 |
Other |
|
Data Sheet |
Negotiable |
|
||||
