Product Summary

The IRLR014NPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLR014NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRLR014NPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Parametrics

IRLR014NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 10 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 7.1 A; (3)IDM Pulsed Drain Current: 40 A; (4)PD @TC = 25℃ Power Dissipation: 28 W; (5)Linear Derating Factor: 0.2 W/℃; (6)VGS Gate-to-Source Voltage: ±16 V; (7)EAS Single Pulse Avalanche Energy: 35 mJ; (8)IAR Avalanche Current: 6.0 A; (9)EAR Repetitive Avalanche Energy: 2.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds 300 ℃ (1.6mm from case).

Features

IRLR014NPBF features: (1)Logic-Level Gate Drive; (2)Surface Mount; (3)Advanced Process Technology; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Lead-Free.

Diagrams

IRLR014NPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLR014NPBF
IRLR014NPBF
International Rectifier
MOSFET
Data Sheet
0-4650: $0.16
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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IRLR/U230A
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0-1: $1.70
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10-100: $1.24
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MOSFET N-CH 55V 10A DPAK
Data Sheet
1-675: $0.38
IRLR014NPBF
IRLR014NPBF
International Rectifier
MOSFET
Data Sheet
0-4650: $0.16
IRLR014NTR
IRLR014NTR

MOSFET N-CH 55V 10A DPAK
Data Sheet
Negotiable