(China (Mainland))
Product Summary
The K4D263238K-VC40 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Parametrics
Absolute maximum ratings:(1)Voltage on any pin relative to Vss:-0.5V to 3.6V;(2)Voltage on VDD supply relative to Vss:-1.0V to 3.6V;(3)Voltage on VDD supply relative to Vss:-0.5V to 3.6V;(4)Storage temperature:-55°C to 150°C;(5)Power dissipation:1.8W;(6)Short circuit current:50mA.
Features
Features:(1)2.5V ± 5% power supply for device operation;(2)2.5V ± 5% power supply for I/O interface;(3)SSTL_2 compatible inputs/outputs;(4) 4 banks operation;(5) Full page burst length for sequential burst type only;(6)Start address of the full page burst should be even;(7)All inputs except data & DM are sampled at the positive going edge of the system clock;(8)Differential clock input;(9) Write Interrupted by Read function;(10) Data I/O transactions on both edges of Data strobe;(11)DLL aligns DQ and DQS transitions with Clock transition;(12) Edge aligned data & data strobe output;(13)Center aligned data & data strobe input;(14)DM for write masking only;(15)144pin FBGA package;(16)Auto & Self refresh;(17)32ms refresh period (4K cycle).
Diagrams
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K4D261638F |
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K4D263238A-GC |
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K4D263238A-GC33 |
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K4D263238E-GC |
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K4D263238E-GC33 |
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