Product Summary

The K4S641632K-UC75 is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. The K4S641632K-UC75 is fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S641632K-UC75 to be useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K4S641632K-UC75 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN, VOUT: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to VSS VDD, VDDQ: -1.0 to 4.6 V; (3)Storage temperature TSTG: -55 to +150 ℃; (4)Power dissipation PD: 1 W; (5)Short circuit current IOS: 50 mA.

Features

K4S641632K-UC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM (x8) & L(U)DQM (x16) for masking; (8)Auto & self refresh; (9)64ms refresh period (4K cycle); (10)Pb/Pb-free Package; (11)RoHS compliant for Pb-free Package.

Diagrams

K4S641632K-UC75 block diagram

K4S641632H
K4S641632H

Other


Data Sheet

Negotiable 
K4S641632H-TC(L)60
K4S641632H-TC(L)60

Other


Data Sheet

Negotiable 
K4S641632H-TC(L)70
K4S641632H-TC(L)70

Other


Data Sheet

Negotiable 
K4S641632H-TC(L)75
K4S641632H-TC(L)75

Other


Data Sheet

Negotiable 
K4S64163LH
K4S64163LH

Other


Data Sheet

Negotiable 
K4S643233H-HE
K4S643233H-HE

Other


Data Sheet

Negotiable