(China (Mainland))
Product Summary
The MT28F800B3WG-9B is a low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory. Due to process technology advances, 5V VPP is optimal for application and production programming. The MT28F800B3WG-9B is fabricated with Micron’s advanced 0.18um CMOS floating-gate process. The MT28F800B3WG-9B is organized into eleven separately erasable blocks.
Parametrics
MT28F800B3WG-9B absolute maximum ratings: (1)Voltage on VCC Supply:Relative to VSS:-0.5V to +4V; (2)Input Voltage Relative to VSS:-0.5V to +4V; (3)VPP Voltage Relative to VSS:-0.5V to +5.5V; (4)RP# or A9 Pin Voltage: Relative to VSS:-0.5V to +12.6V; (5)Temperature Under Bias:-10℃ to +80℃; (6)Storage Temperature (plastic):-55℃ to +125℃; (7)Power Dissipation:1W.
Features
MT28F800B3WG-9B features: (1)Eleven erase blocks: 16KB/8K-word boot block (protected), Two 8KB/4K-word parameter blocks, Eight main memory blocks; (2)Smart 3 technology (B3): 3.3V ±0.3V VCC, 3.3V ±0.3V VPP application programming, 5V ±10% VPP application/production programming; (3)Compatible with 0.3μm Smart 3 device; (4)Advanced 0.18μm CMOS floating-gate process; (5)Address access time: 90ns; (6)100,000 ERASE cycles; (7)Industry-standard pinouts; (8)Inputs and outputs are fully TTL-compatible; (9)Automated write and erase algorithm; (10)Two-cycle WRITE/ERASE sequence; (11)TSOP, SOP and FBGA packaging options; (12)Byte- or word-wide READ and WRITE: 1 Meg x 8/512K x 16.
Diagrams
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