SI4920DY-T1-E3

Dual N-Channel 30-V (D-S) MOSFET, 8-SOIC, Surface Mount, Logic Level Gate

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.36~0.40 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.36~0.40

PartNumber:: SI4920DY-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: SOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Lisa's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-12-16

From Other Seller

Part Number:SI4920DY-T1-E3
US $0.36 - 0.40
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
YL-G709

US $65.00 - 68.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The SI4920DY-T1-E3 is a Dual N-Channel 30-V (D-S) MOSFET. The SI4920DY-T1-E3 is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SI4920DY-T1-E3.

Parametrics

SI4920DY-T1-E3 general specifications: (1)Gate Threshold Voltage:2V; (2)On-State Drain Current:238A; (3)Drain-Source On-State Resistance:0.020Ω; (4)Forward Transconductance:23S to 25S; (5)Diode Forward Voltage:0.72V.

Features

SI4920DY-T1-E3 features: (1)N-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.