SI4920DY-T1-E3

Dual N-Channel 30-V (D-S) MOSFET, 8-SOIC, Surface Mount, Logic Level Gate

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PartNumber:: SI4920DY-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: SOP | D/C: 10+

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Products Upload time: 2011-12-16

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Product Summary

The SI4920DY-T1-E3 is a Dual N-Channel 30-V (D-S) MOSFET. The SI4920DY-T1-E3 is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SI4920DY-T1-E3.

Parametrics

SI4920DY-T1-E3 general specifications: (1)Gate Threshold Voltage:2V; (2)On-State Drain Current:238A; (3)Drain-Source On-State Resistance:0.020Ω; (4)Forward Transconductance:23S to 25S; (5)Diode Forward Voltage:0.72V.

Features

SI4920DY-T1-E3 features: (1)N-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.