Product Summary
The BC856W,115 is a PNP general purpose transistor. The applications of the BC856W,115 include General purpose switching and amplification.
Parametrics
BC856W,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: -80V; (2)VCEO collector-emitter voltage open base: -65V; (3)VEBO emitter-base voltage open collector: -5V; (4)IC collector current (DC): -100mA; (5)ICM peak collector current: -200mA; (6)IBM peak base current: -200mA; (7)Ptot total power dissipation Tamb≤25℃; note 1: 200mW; (8)Tstg storage temperature -65 to +150℃; (9)Tj junction temperature: 150℃; (10)Tamb operating ambient temperature -65 to +150℃.
Features
BC856W,115 features: (1)Low current (max. 100 mA); (2)Low voltage (max. 80); (3)S-mini package.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BC856W,115 |
NXP Semiconductors |
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Data Sheet |
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