K9F5608U0C-YCB0

32M x 8 bit NAND flash memory, 1.8V, TSOP, Hardware Data Protection, 200ms

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Price:: US $1.73~1.92 / piece [Get Latest Price]

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	US $1.73~1.92

PartNumber:: K9F5608U0C-YCB0

Brand:: Samsung semiconductor - SAMSUNG | Pack: TSOP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-12-16

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Part Number:K9F5608U0C-YCB0
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Product Summary

The K9F5608U0C-YCB0 is a 32M x 8 bit NAND flash memory. The K9F5608U0C-YCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Even the write-intensive systems can take advantage of the K9F5608U0C-YCB0 extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F5608U0C-YCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9F5608U0C-YCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: VIN/OUT:-0.6V to +2.45V, VCC:-0.2V to +2.45V, VCCQ:-0.2V to +2.45V; (2)Temperature Under Bias:-10 to +125℃; (3)Storage Temperature:-65 to +150℃; (4)Short Circuit Current:5mA.

Features

K9F5608U0C-YCB0 features: (1)Voltage Supply: 2.7 to 3.6 V; (2)Organization: Memory Cell Array: (32M + 1024K)bit x 8 bit, Data Register: (512 + 16)bit x 8bit; (3)Automatic Program and Erase: Page Program: (512 + 16)Byte, Block Erase:: (16K + 512)Byte; (4)Page Read Operation: Page Size: (512 + 16)Byte, Random Access: 10ms(Max.), Serial Page Access: 50ns(Min.); (5)Fast Write Cycle Time: Program time : 200ms(Typ.), Block Erase Time : 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: Endurance: 100K Program/Erase Cycles, Data Retention : 10 Years; (9)Command Register Operation; (10)Intelligent Copy-Back ; (11)Unique ID for Copyright Protection; (12)Power-On Auto-Read Operation; (13)Safe Lock Mechanism.