(China (Mainland))
Product Summary
The IRL620STRLPBF is a Power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRL620STRLPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 5.0 V:5.2A; (2)Continuous Drain Current, VGS @ 5.0 V:3.3A; (3)Pulsed Drain Current:21A; (4)Power Dissipation:50W; (5)Power Dissipation (PCB Mount):3.1W; (6)Linear Derating Factor:0.40W/℃; (7)Linear Derating Factor (PCB Mount):0.025W/℃; (8)Gate-to-Source Voltage:±10V; (9)Single Pulse Avalanche Energy:125mJ; (10)Avalanche Current:5.2A; (11)Repetitive Avalanche Energy:5.0mJ; (12)Peak Diode Recovery dv/dt:5.0V/ns; (13)Junction and Storage Temperature Range:-55 to + 150℃.
Features
IRL620STRLPBF features: (1)Surface Mount; (2)Available in Tape & Reel; (3)Dynamic dv/dt Rating; (4)Repetitive Avalanche Rated; (5)Logic-Level Gate Drive; (6)RDS(on) Specified at VGS=4V & 5V; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRL620STRLPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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IRL610A |
Fairchild Semiconductor |
MOSFET 200V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRL620 |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
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IRL620, SiHL620 |
Other |
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Data Sheet |
Negotiable |
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IRL620A |
Fairchild Semiconductor |
MOSFET 200V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRL620PBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
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IRL620S |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
Negotiable |
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