(China (Mainland))
Product Summary
The IS41LV16256B-35KL is a 262,144 × 16-bit high-performance CMOS Dynamic Random Access Memory. It offers accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B-35KL ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41LV16256B-35KL ideally suited for high band-width graphics, digital signal processing, highperformance computing systems, and peripheral applications.
Parametrics
IS41LV16256B-35KL absolute maximum ratings: (1)VT Voltage on Any Pin Relative to GND 3.3V: -0.5 to 4.6 V; (2)VDD Supply Voltage 3.3V: -0.5 to 4.6 V; (3)IOUT Output Current: 50 mA; (4)PD Power Dissipation: 1 W; (5)TA Commercial Operation Temperature: 0 to +70 ℃; (6)TSTG Storage Temperature: –55 to +125 ℃.
Features
IS41LV16256B-35KL features: (1)TTL compatible inputs and outputs; (2)Refresh Interval: 512 cycles/8 ms; (3)Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden; (4)JEDEC standard pinout; (5)Single power supply: 3.3V ±10%; (6)Byte Write and Byte Read operation via two CAS; (7)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS41LV16256B-35KL |
ISSI |
DRAM 4M 256Kx16 35ns |
Data Sheet |
Negotiable |
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IS41LV16256B-35KL-TR |
ISSI |
DRAM 4M 256Kx16 35ns |
Data Sheet |
Negotiable |
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