(China (Mainland))
Product Summary
The SPB11N60S5 is a Cool MOS Power Transistor.
Parametrics
SPB11N60S5 absolute maximum ratings: (1)Continuous drain current ID: 11A at TC = 25 ℃; (2)Pulsed drain current, tp limited by Tjmax ID puls: 22A; (3)Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS: 340 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID = 11 A, VDD = 50 V EAR: 0.6mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 11 A; (6)Gate source voltage VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30; (8)Power dissipation, TC = 25℃ Ptot: 125 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150℃.
Features
SPB11N60S5 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SPB11N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 11A |
Data Sheet |
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