Product Summary

The SPB11N60S5 is a Cool MOS Power Transistor.

Parametrics

SPB11N60S5 absolute maximum ratings: (1)Continuous drain current ID: 11A at TC = 25 ℃; (2)Pulsed drain current, tp limited by Tjmax ID puls: 22A; (3)Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS: 340 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID = 11 A, VDD = 50 V EAR: 0.6mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 11 A; (6)Gate source voltage VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30; (8)Power dissipation, TC = 25℃ Ptot: 125 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150℃.

Features

SPB11N60S5 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.

Diagrams

SPB11N60S5 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB11N60S5
SPB11N60S5
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
0-1: $2.39
1-10: $1.98
10-100: $1.75
100-500: $1.48
500-1000: $0.86
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB1
SPB1
Hammond Manufacturing
Enclosures, Boxes, & Cases SWING PANEL BRACKET
Data Sheet
Negotiable 
SPB100N03S2L-03G
SPB100N03S2L-03G
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Data Sheet
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SPB11N60C3
SPB11N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 650V 11A
Data Sheet
0-1: $1.69
1-25: $1.36
25-100: $1.23
100-250: $1.11
SPB11N60S5
SPB11N60S5
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
0-1: $2.39
1-10: $1.98
10-100: $1.75
100-500: $1.48
500-1000: $0.86
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SPB160N04S2-03
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Data Sheet
0-490: $2.47
490-500: $2.00
500-1000: $1.69
1000-2000: $1.60
SPB10N10L G
SPB10N10L G
Infineon Technologies
MOSFET N-CH 100V 10.3A
Data Sheet
Negotiable