Product Summary
The SPP04N60C3 is a Cool MOS Power Transistor.
Parametrics
SPP04N60C3 absolute maximum ratings: (1)Continuous drain current ID: 4.5 A; (2)Pulsed drain current, tp limited by Tjmax ID puls: 13.5 A; (3)Avalanche energy, single pulse ID=3.4, VDD=50V EAS: 130 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=4.5A, VDD=50V EAR: 0.4 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 4.5 A; (6)Gate source voltage static VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30; (8)Power dissipation, TC = 25℃ Ptot: 31 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.
Features
SPP04N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPP04N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 4.5A |
Data Sheet |
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SPP02N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 1.8A |
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MOSFET COOL MOS N-CH 600V 1.8A |
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SPP03N60S5 |
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SPP04N50C3 |
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