Product Summary

The STB80PF55T4 is a STripFET II power MOSFET. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The applications of the STB80PF55T4 include: motor control, dc-dc & dc-ac converters.

Parametrics

STB80PF55T4 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 55 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 55 V; (3)VGS Gate- source Voltage: ±16 V; (4)ID(*) Drain Current (continuos) at TC = 25℃: 80 A; (5)ID Drain Current (continuos) at TC = 100℃: 57 A; (6)IDM Drain Current (pulsed): 320 A; (7)Ptot Total Dissipation at TC = 25℃: 300 W, Derating Factor: 2 W/℃; (8)dv/dt Peak Diode Recovery voltage slope: 7 V/ns; (9)EAS Single Pulse Avalanche Energy: 1.4 mJ; (10)Tstg Storage Temperature Tj Max. Operating Junction Temperature: -55 to 175 ℃.

Features

STB80PF55T4 features: (1)typical rds(on) = 0.016 Ω; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)application oriented characterization.

Diagrams

STB80PF55T4 diagram

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(USD)		 Quantity
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