(China (Mainland))
Product Summary
The K4S281632K-UC75 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Absolute maximum ratings:(1)Voltage on any pin relative to Vss:-1.0V to 4.6V;(2)Voltage on VDD supply relative to Vss:-1.0V to 4.6V;(3)Storage temperature:-55°C to +150°C;(4)Power dissipation:1W;(5)Short circuit current:50mA.
Features
Features:(1)JEDEC standard 3.3V power supply;(2)JEDEC standard 3.3V power supply;(3)Four banks operation;(4)All inputs are sampled at the positive going edge of the system clock;(5)Burst read single-bit write operation;(6)L(U)DQM (x16) for masking;(7)Auto & self refresh;(8)64ms refresh period (4K Cycle);(9)RoHS compliant;(10)Support Industrial Temp (-40 to 85°C).
Diagrams
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 K4S281632K-UC75 |
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Negotiable |
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K4S280432A |
Other |
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Negotiable |
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K4S280432B |
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Negotiable |
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K4S280432C |
Other |
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Negotiable |
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K4S280432E-TC(L)75 |
Other |
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Negotiable |
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K4S280432F |
Other |
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Negotiable |
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K4S280432F-TC(L)75 |
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Negotiable |
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