Product Summary

The Micron MT48LC4M16A2P75G 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. The MT48LC4M16A2P75G is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the MT48LC4M16A2P75G are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.

Parametrics

MT48LC4M16A2P75G absolute maximum ratings: (1)Voltage on VDD, VDDQ Supply Relative to VSS: -1V to +4.6V; (2)Voltage on Inputs, NC or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (commercial): 0℃ to +70℃; (4)Operating Temperature, TA (extended; IT parts): -40℃ to +85℃; (5)Storage Temperature (plastic): -55℃ to +150℃; (6)Power Dissipation: 1W.

Features

MT48LC4M16A2P75G features: (1)PC66-, PC100-, and PC133-compliant; (2)Fully synchronous; all signals registered on positive edge of system clock; (3)Internal pipelined operation; column address can be changed every clock cycle; (4)Internal banks for hiding row access/precharge; (5)Programmable burst lengths: 1, 2, 4, 8, or full page; (6)Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes; (7)Self Refresh Modes: standard and low power; (8)64ms, 4,096-cycle refresh; (9)LVTTL-compatible inputs and outputs; (10)Single +3.3V ±0.3V power supply.

Diagrams

MT48LC4M16A2P75G block diagram

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